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Journal of Nanomaterials
Volume 2013, Article ID 137564, 6 pages
Research Article

A Kind of Coating Method of GaN-MOCVD Graphite Susceptor

1School of Information and Electrical Engineering, Hunan University of Science and Technology, Xiangtan 411201, China
2Guangxi Experiment Center of Information Science, Guilin University of Electronic Technology, Guilin 541004, China
3The 41st Institute of China Electronics Technology Group Corporation, Qingdao 266555, China

Received 13 March 2013; Revised 13 May 2013; Accepted 24 May 2013

Academic Editor: Yang Chai

Copyright © 2013 Xiao-feng Wu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A novel coating method for the GaN-MOCVD graphite susceptor is proposed in the paper, which means that the upper surface and sides of the graphite susceptor are covered with a low emissivity material coating, and the surface under the susceptor is covered with a high emissivity SiC coating. By using finite element analysis software COMSOL Multiphysics, the temperature field of the susceptors without coating, with common SiC coating, and with improved coating is obtained and compared, which shows that the susceptor with the improved coating not only increases the heating efficiency of the heater, but also improves the temperature uniformity of the substrate, which can be of great benefit to the film growth. In addition, this improved coating for the susceptor has the same heating sensitivity as the common SiC coating.