Research Article

Annealing Effect on the Thermoelectric Properties of Bi2Te3 Thin Films Prepared by Thermal Evaporation Method

Figure 5

FE-SEM cross sectional photographs: (a) as-deposited Bi2Te3 thin film at the substrate temperature of 150°C; (b), (c), (d), and (e) thin films annealed at 100°C, 150°C, 200°C, and 250°C for 30 min, respectively.
201017.fig.005a
(a)
201017.fig.005b
(b)
201017.fig.005c
(c)
201017.fig.005d
(d)
201017.fig.005e
(e)