Hydrogenic-Donor Impurity Binding Energy Dependence of the Electric Field in GaAs/Al_xGa_1−xAs Quantum Rings

Figure 4

Binding energy of a donor impurity in a cylindrical GaAs/Al_𝑥Ga_1−𝑥As QR as a function of the applied electric field for 𝑅₁=0.5𝑎^∗,𝑅₂=3.5𝑎^∗,𝑑=1.0𝑎^∗, and five different positions of the donor impurity.