Table of Contents Author Guidelines Submit a Manuscript
Journal of Nanomaterials
Volume 2013 (2013), Article ID 259458, 7 pages
Research Article

Energy Dissipation and the High-Strain Rate Dynamic Response of Vertically Aligned Carbon Nanotube Ensembles Grown on Silicon Wafer Substrate

1Composite Structures and Nano-Engineering Research, Department of Mechanical Engineering, University of Mississippi, University, MS 38677, USA
2U.S. Army Engineer Research and Development Center—Construction Engineering Research Laboratory (ERDC-CERL), Champaign, IL 61821, USA

Received 14 March 2013; Revised 3 August 2013; Accepted 12 August 2013

Academic Editor: Teng Li

Copyright © 2013 P. Raju Mantena et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The dynamic mechanical behavior and high-strain rate response characteristics of a functionally graded material (FGM) system consisting of vertically aligned carbon nanotube ensembles grown on silicon wafer substrate (VACNT-Si) are presented. Flexural rigidity (storage modulus) and loss factor (damping) were measured with a dynamic mechanical analyzer in an oscillatory three-point bending mode. It was found that the functionally graded VACNT-Si exhibited significantly higher damping without sacrificing flexural rigidity. A Split-Hopkinson pressure bar (SHPB) was used for determining the system response under high-strain rate compressive loading. Combination of a soft and flexible VACNT forest layer over the hard silicon substrate presented novel challenges for SHPB testing. It was observed that VACNT-Si specimens showed a large increase in the specific energy absorption over a pure Si wafer.