Nucleation and Growth Mechanism of Si Amorphous Film Deposited by PIAD
Figure 2
The surface topography images of the Si film with different thickness. The (a), (c), and (e) were the 10 μm × 10 μm 2D images of 2 nm, 5 nm, and 10 nm Si film respectively, and the (b), (d), and (f) were the 3D images of the selected area in the 2D images of the corresponding Si films.