Improve the Properties of p-i-n <i>α</i>-Si:H Thin-Film Solar Cells Using the Diluted Hydrochloric Acid-Etched GZO Thin Films

<table>Variations of the Hall mobility, carrier concentration, and resistivity as a function of the GZO thin films deposited under different substrate temperatures.</table>

Journal of Nanomaterials

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Figure 3

Figure 3: Improve the Properties of p-i-n <i>α</i>-Si:H Thin-Film Solar Cells Using the Diluted Hydrochloric Acid-Etched GZO Thin Films 

Journal of Nanomaterials

Improve the Properties of p-i-n α-Si:H Thin-Film Solar Cells Using the Diluted Hydrochloric Acid-Etched GZO Thin Films

Figure 3