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Journal of Nanomaterials
Volume 2013 (2013), Article ID 560252, 5 pages
http://dx.doi.org/10.1155/2013/560252
Research Article

An Analytic Model for Estimating the Length of the Velocity Saturated Region in Double Gate Bilayer Graphene Transistors

1Faculty of Electrical Engineering, Universiti Teknologi Malaysia (UTM), Johor Bahru, 81310 Johor, Malaysia
2Department of Electrical Engineering, IAU, Yasooj Branch, Yasooj 7591483587, Iran
3Centre for Artificial Intelligence and Robotics (CAIRO), Universiti Teknologi Malaysia (UTM), 54100 Kuala Lumpur, Malaysia
4Malaysia-Japan International Inst. of Technology, Universiti Teknologi Malaysia (UTM), 54100 Kuala Lumpur, Malaysia

Received 1 August 2013; Revised 7 October 2013; Accepted 8 October 2013

Academic Editor: Zhenhui Kang

Copyright © 2013 M. Saeidmanesh et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

M. Saeidmanesh, M. J. Kiani, Kang Eng Siew, E. Akbari, H. Karimi, and Razali Ismail, “An Analytic Model for Estimating the Length of the Velocity Saturated Region in Double Gate Bilayer Graphene Transistors,” Journal of Nanomaterials, vol. 2013, Article ID 560252, 5 pages, 2013. doi:10.1155/2013/560252