Journal of Nanomaterials / 2013 / Article / Fig 2

Research Article

An Analytic Model for Estimating the Length of the Velocity Saturated Region in Double Gate Bilayer Graphene Transistors

Figure 2

The surface potential along the drain side channel length for three different values of drain-source voltages with  nm, , and . The solid lines represent modelling results and symbols represent simulation results of FlexPDE.

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