An Analytic Model for Estimating the Length of the Velocity Saturated Region in Double Gate Bilayer Graphene Transistors
The surface potential along the drain side channel length for three different values of drain-source voltages with nm, , and . The solid lines represent modelling results and symbols represent simulation results of FlexPDE.
Article of the Year Award: Outstanding research contributions of 2020, as selected by our Chief Editors. Read the winning articles.