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Journal of Nanomaterials
Volume 2013 (2013), Article ID 579131, 6 pages
Research Article

I-V Characteristics of PtxCo1−x (x = 0.2, 0.5, and 0.7) Thin Films

1Department of Physics, Gebze Institute of Technology, 41400 Gebze, Kocaeli, Turkey
2Metallurgical and Materials Enginering, Sakarya University, 54187 Esentepe, Sakarya, Turkey
3Department of Physics, Sakarya University, 54187 Esentepe, Sakarya, Turkey
4Council of Forensic Medicine, 34196 Istanbul, Turkey
5Department of Physics, Yildiz Technical University, Davutpasa, 34210 Istanbul, Turkey

Received 27 April 2013; Revised 2 July 2013; Accepted 4 July 2013

Academic Editor: Mengnan Qu

Copyright © 2013 M. Erkovan et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Three different chemical ratios of PtxCo1−x thin films were grown on p-type native oxide Si (100) by Magneto Sputtering System with cosputtering technique at 350°C temperature to investigate electrical prosperities. X-ray photoelectron spectroscopy analysis technique was used to specify chemical ratios of these films. The current-voltage (I-V) measurements of metal-semiconductor (MS) Schottky diodes were carried out at room temperature. From the I-V analysis of the samples, ideality factor (n), barrier height (ϕ), and contact resistance values were determined by using thermionic emission (TE) theory. Some important parameters such as barrier height, ideality factor, and serial resistance were calculated from the I-V characteristics based on thermionic emission mechanism. The ideality factors of the samples were not much greater than unity, and the serial resistances of the samples were also very low.