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Journal of Nanomaterials
Volume 2013, Article ID 636239, 8 pages
http://dx.doi.org/10.1155/2013/636239
Research Article

The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode Performance

1Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor Bahru, Malaysia
2Nanotechnology Research Center Nanoelectronic Group, Physics Department, Urmia University, Urmia 57147, Iran
3Department of Electrical Engineering, Islamic Azad University, Yasooj Branch, Yasooj 63614, Iran
4Centre for Artificial Intelligence and Robotics (CAIRO), UTM, 81310 Skudai, Johor Bahru, Malaysia
5Department of Electrical, Computer and Biomedical Engineering, Islamic Azad University, Qazvin Branch, Qazvin 34185-1416, Iran

Received 21 August 2013; Revised 11 October 2013; Accepted 17 October 2013

Academic Editor: Munawar A. Riyadi

Copyright © 2013 Meisam Rahmani et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Meisam Rahmani, Razali Ismail, Mohammad Taghi Ahmadi, et al., “The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode Performance,” Journal of Nanomaterials, vol. 2013, Article ID 636239, 8 pages, 2013. https://doi.org/10.1155/2013/636239.