Anomalous Threshold Voltage Variability of Nitride Based Charge Storage Nonvolatile Memory Devices

Figure 7

Δσ calculated based on peak of 𝑉_𝑡 distribution for samples of each technology node, that is, (a) 110 nm, (b) 90 nm, and (c) 65 nm.

(a) 110 nm NVM

(b) 90 nm NVM

(c) 65 nm NVM