Research Article

SiO2 Nanopillars on Microscale Roughened Surface of GaN-Based Light-Emitting Diodes by SILAR-Based Method

Figure 3

Tilted-view and cross-sectional SEM images of the surface after etching SiO2 by ICP in various heights of SiO2 nanopillars: (a) roughened surface of ITO on p-GaN; (b) and (e) 200 nm SiO2 nanopillars: LED II; (c) and (f) 400 nm SiO2 nanopillars: LED III; and (d) and (g) 600 nm SiO2 nanopillars: LED IV.
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