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Journal of Nanomaterials
Volume 2013 (2013), Article ID 836315, 5 pages
http://dx.doi.org/10.1155/2013/836315
Research Article

Capacitance Variation of Electrolyte-Gated Bilayer Graphene Based Transistors

1Centre for Artificial Intelligence and Robotics, Universiti Teknologi Malaysia, 54100 Kuala Lumpur, Malaysia
2Malaysia-Japan International Institute of Technology, Universiti Teknologi Malaysia, 54100 Kuala Lumpur, Malaysia
3Computational Nanoelectronic Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Johor, Malaysia
4Nanotechnology Research Center Nanoelectronic Group, Physics Department, Urmia University, Urmia 57147, Iran
5Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia

Received 15 March 2013; Accepted 8 July 2013

Academic Editor: Raquel Verdejo

Copyright © 2013 Hediyeh Karimi et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Quantum capacitance of electrolyte-gated bilayer graphene field-effect transistors is investigated in this paper. Bilayer graphene has received huge attention due to the fact that an energy gap could be opened by chemical doping or by applying external perpendicular electric field. So, this extraordinary property can be exploited to use bilayer graphene as a channel in electrolyte-gated field-effect transistors. The quantum capacitance of bi-layer graphene with an equivalent circuit is presented, and also based on the analytical model a numerical solution is reported. We begin by modeling the DOS, followed by carrier concentration as a function in degenerate and nondegenerate regimes. To further confirm this viewpoint, the presented analytical model is compared with experimental data, and acceptable agreement is reported.