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Journal of Nanomaterials
Volume 2014 (2014), Article ID 103640, 5 pages
http://dx.doi.org/10.1155/2014/103640
Research Article

The Formation Site of Noninterfacial Misfit Dislocations in InAs/GaAs Quantum Dots

State Key Laboratory of Information Photonics and Optical Communications, Institute of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, P.O. Box 49 (Room 339), Beijing 100876, China

Received 30 November 2013; Revised 7 January 2014; Accepted 7 January 2014; Published 16 February 2014

Academic Editor: Wen Lei

Copyright © 2014 Shuai Zhou et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Shuai Zhou, Yumin Liu, Pengfei Lu, Lihong Han, and Zhongyuan Yu, “The Formation Site of Noninterfacial Misfit Dislocations in InAs/GaAs Quantum Dots,” Journal of Nanomaterials, vol. 2014, Article ID 103640, 5 pages, 2014. doi:10.1155/2014/103640