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Journal of Nanomaterials
Volume 2014, Article ID 104136, 7 pages
Research Article

Improvement of Short-Circuit Current Density in p-O:Li/n-Si Heterojunction Solar Cells by Wet Chemical Etching

1Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, No. 1 Dasyue Road, East District, Tainan City 701, Taiwan
2Department of Electronic Engineering, Cheng Shiu University, 840 Chengcing Road, Niaosong District, Kaohsiung City 833, Taiwan

Received 15 June 2014; Accepted 26 August 2014; Published 21 September 2014

Academic Editor: Chien-Jung Huang

Copyright © 2014 Feng-Hao Hsu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This study confirms that the surface texturation of window layer (Al-Y codoped ZnO) etched by diluted HCl effectively increases conversion efficiency of p-O:Li/n-Si heterojunction solar cells. The results show that the short circuit current density ( ) of cell etched at 10 s increases about 8.5% compared to unetched cell, which also corresponds to the increase of efficient photoelectric conversion in NIR region as shown in external quantum efficiency spectra. It is attributed to the increase of light transmittance of AZOY thin films in the NIR region and the effective light path of the NIR wavelength, which results in increasing of light absorption in the base layer.