Efficient Ab-Initio Electron Transport Calculations for Heterostructures by the Nonequilibrium Green’s Function Method

<div>Transmission probability (a) and DOS (b) for various thicknesses of Si layers around the Fermi level. The system shows metallic behavior with finite transmission for the entire energy regime for the minimum Si layer thickness. For a thickness of more than three-layers, finite energy gaps are formed around the Fermi level, which originate from the semiconducting properties of the Si layers.</div>

Journal of Nanomaterials

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Figure 4: Efficient Ab-Initio Electron Transport Calculations for Heterostructures by the Nonequilibrium Green’s Function Method 