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Journal of Nanomaterials
Volume 2014, Article ID 173276, 7 pages
Research Article

High Stability White Organic Light-Emitting Diode (WOLED) Using Nano-Double-Ultra Thin Carrier Trapping Materials

Department of Electronic Engineering, Fortune Institute of Technology, Kaohsiung, Taiwan

Received 25 January 2014; Accepted 28 January 2014; Published 6 March 2014

Academic Editor: Chien-Jung Huang

Copyright © 2014 Kan-Lin Chen. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The structure of indium tin oxide (ITO) (100 nm)/molybdenum trioxide (MoO3) (15 nm)/N,N0-bis-(1-naphthyl)-N,N0-biphenyl-1,10-biphenyl-4,40-diamine (NPB) (40 nm)/4,4′-Bis(2,2-diphenylvinyl)-1,1′-biphenyl (DPVBi) (10 nm)/5,6,11,12-tetraphenylnaphthacene (Rubrene) (0.2 nm)/DPVBi (24 nm)/Rubrene (0.2 nm)/DPVBi (6 nm)/4,7-diphenyl-1,10-phenanthroline (BPhen): cesium carbonate (Cs2Co3) (10 nm)/Al (120 nm) with high color purity and stability white organic light-emitting diode (WOLED) was fabricated. The function of the multiple-ultra-thin material (MUTM), such as Rubrene, is as the yellow light-emitting layer and trapping layer. The results show that the MUTM has an excellent carrier capture effect, resulting in high color stability of the device at different applied voltages. The Commissions Internationale De L’Eclairage (CIE) coordinate of this device at 3~7 V is few displacement and shows a very slight variation of (±0.01, ±0.01). The maximum brightness of 9986 cd/m2 and CIE coordinates of (0.346, 0.339) are obtained at 7 V. The enhanced performance of the device may result from the direct charge trapping in MUTM and it can be found in the electroluminescence (EL) process.