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Journal of Nanomaterials
Volume 2014, Article ID 238291, 5 pages
Research Article

Analysis of the High Conversion Efficiencies β-FeSi2 and BaSi2 n-i-p Thin Film Solar Cells

Department of Electronic Engineering, I-Shou University, Kaohsiung 840, Taiwan

Received 20 June 2014; Revised 20 September 2014; Accepted 22 September 2014; Published 29 December 2014

Academic Editor: Chien-Jung Huang

Copyright © 2014 Jung-Sheng Huang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Both β-FeSi2 and BaSi2 are silicides and have large absorption coefficients; thus they are very promising Si-based new materials for solar cell applications. In this paper, the dc - characteristics of n-Si/i-βFeSi2/p-Si and n-Si/i-BaSi2/p-Si thin film solar cells are investigated by solving the charge transport equations with optical generations. The diffusion current densities of free electron and hole are calculated first. Then the drift current density in the depletion regions is obtained. The total current density is the sum of diffusion and drift current densities. The conversion efficiencies are obtained from the calculated - curves. The optimum conversion efficiency of n-Si/i-βFeSi2/p-Si thin film solar cell is 27.8% and that of n-Si/i-BaSi2/p-Si thin film solar cell is 30.4%, both are larger than that of Si n-i-p solar cell ( is 20.6%). These results are consistent with their absorption spectrum. The calculated conversion efficiency of Si n-i-p solar cell is consistent with the reported researches. Therefore, these calculation results are valid in this work.