Improvement of Porous GaAs (100) Structure through Electrochemical Etching Based on DMF Solution

Figure 3

Surface morphology of porous GaAs with the variation of DMF concentration in the mixture of H₂SO₄ acid for (a) sample D, (b) sample E, and (c) sample F, at current density, 𝐽 = ~250 mA/cm², and time, 𝑡=10 min.

(a) 1 : 1

(b) 1 : 3

(c) 1 : 9