Optimization of the Electrodeposition Parameters to Improve the Stoichiometry of In₂S₃ Films for Solar Applications Using the Taguchi Method

Table 1

Control deposition parameters and levels for the electrodeposition of In₂S₃ thin films.

Level	“𝐴,” deposition voltage (V)	“𝐵,” deposition time (min)	“𝐶,” composition of solution	“𝐷,” deposition temperature (°C)
1	−0.6	3	0.1 M S + 0.05 M InCl3 + 0.1 M NaCl	150
2	−0.7	6	0.1 M S + 0.1 M Na2S2O3·5H2O + 0.05 M InCl3 + 0.1 M NaCl	160
3	−0.8	9	0.2 M S + 0.05 M InCl3 + 0.1 M NaCl	170