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Journal of Nanomaterials
Volume 2014 (2014), Article ID 310716, 9 pages
Research Article

Synthesis of GeSe2 Nanobelts Using Thermal Evaporation and Their Photoelectrical Properties

1National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
2Nanomaterials and Chemistry Key Laboratory, Wenzhou University, Wenzhou 325027, China
3University of Missouri-Kansas City, Kansas City, MO 64110, USA

Received 12 March 2014; Accepted 14 April 2014; Published 17 June 2014

Academic Editor: Li Li

Copyright © 2014 Lijie Zhang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


GeSe2 nanobelts were synthesized via a simple thermal-evaporation process by using gold particles as catalyst and GeSe2 flakes as starting materials. The morphology, crystal structure, and composition were characterized with scanning electron microscopy (SEM), high-resolution transmission electron microscopy (TEM), X-ray diffraction spectroscopy (XRD), X-ray photoelectron spectroscopy (XPS), and energy-dispersive X-ray spectroscopy (EDS). SEM micrographs show that most of GeSe2 nanobelts have distinct segmented structures (wide belt, zigzag belt, and narrow belt). A possible mechanism was proposed for the growth of segmented nanobelts. It is possible that the growth of the segmented nanobelts is dominated by both vapor-liquid-solid and vapor-solid mechanisms. Devices made of single GeSe2 nanobelt have been fabricated and their photoelectrical property has been investigated. Results indicate that these nanobelt devices are potential building blocks for optoelectronic applications.