Improving the Microstructure and Electrical Properties of Aluminum Induced Polysilicon Thin Films Using Silicon Nitride Capping Layer
Figure 5
OM images of the poly-Si thin films (a) using AIC with the capping layer for the annealing time of 15, 30, 45, and 60 min and (b) using AIC without the capping layer for the annealing time of 120 min; and (c) the variation of average grain sizes of the poly-Si thin films using AIC with the capping layer.
