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Journal of Nanomaterials
Volume 2014, Article ID 509408, 7 pages
Research Article

Improved Ferroelectric and Leakage Properties of Ce Doped in BiFeO3 Thin Films

School of Physical Science and Technology and Inner Mongolia Key Lab of Nanoscience and Nanotechnology, Inner Mongolia University, Hohhot 010021, China

Received 10 May 2014; Accepted 20 May 2014; Published 8 June 2014

Academic Editor: Daniela Predoi

Copyright © 2014 Alima Bai et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Ce doped BiFeO3 thin films with a perovskite structure were prepared using solution-gelation method. It shows that the ferroelectric properties have been enhanced after doping Ce. The enhanced ferroelectric properties are attributed to the structural transformation and the reduced leakage current after doping rare metal of Ce. It has been found that the phase structures of the films transfer from rhombohedral symmetry structure to the coexistence of the tetragonal and orthorhombic symmetry structure. And Fe2+ ions have been reduced, which leads to the decreased leakage for Ce doped BiFeO3 thin films. The present work can provide an available way to improve the ferroelectric and leakage properties for multiferroic BiFeO3 based thin films.