AlGaN/GaN High Electron Mobility Transistors with Multi-Mg_𝑥N_𝑦/GaN Buffer

Table 1

The schematic device structures of samples A and B.

Sample A	Sample B
20 nm 𝑛-Al0.22Ga0.78N (1 × 10^17 cm^−3)	20 nm 𝑛-Al0.22Ga0.78N (1 × 10^17 cm^−3)
2.2 𝜇m un-GaN	2.2 𝜇m un-GaN
LT-GaN buffer	multi-Mg𝑥N𝑦/GaN buffer
Sapphire	Sapphire