III–V Nanowires: Synthesis, Property Manipulations, and Device Applications
Figure 5
Typical curves of GaAs NW FETs based on different NW diameters ( V): (a) p-type characteristic ( nm), (b) ambipolar conduction ( nm), (c) n-type characteristic ( nm), and (d) statistics of the p- to n-type transition with increasing NW diameters in the range of 10–100 nm. (e) Cross-sectional view of GaAs NWs with different diameters and the corresponding equilibrium energy band diagram at zero gate bias. Reproduced from [36] with permission from The American Chemical Society.