Review Article

III–V Nanowires: Synthesis, Property Manipulations, and Device Applications

Figure 5

Typical curves of GaAs NW FETs based on different NW diameters (  V): (a) p-type characteristic (  nm), (b) ambipolar conduction (  nm), (c) n-type characteristic (  nm), and (d) statistics of the p- to n-type transition with increasing NW diameters in the range of 10–100 nm. (e) Cross-sectional view of GaAs NWs with different diameters and the corresponding equilibrium energy band diagram at zero gate bias. Reproduced from [36] with permission from The American Chemical Society.
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(e)