Effect of Mn-Site for Al Substitution on Structural, Electrical and Magnetic Properties in La_{𝟎.𝟔𝟕}Sr_{𝟎.𝟑𝟑}Mn_𝟏−𝑥Al_𝑥O_𝟑 Thin Films by Sol-Gel Method

Table 2

Values of 𝜃_𝐷/2, phonon frequency, 𝑣 (Hz), the density of states, 𝑁(𝐸_𝐹), at Fermi level, and the activation energies from the resistivity plot.

𝑥	𝑇𝑝𝑇𝑝 (K)	𝑇𝑜	𝑁(𝐸𝐹) (eV^−1 cm^−3) × 10^16	𝜃𝐷/2	𝑣 (Hz) × 10^12	𝐸𝑎 (meV)
0.00	282	37428689.3	5.4267	284.0283	5.9183	977.521
0.05	256	46396954.9	4.3777	258.003	5.3759	711.172
0.10	270	2798410000	0.07258	271.001	5.6469	867.893
0.15	233	280200294	0.72489	252.000	5.2509	1448.356
0.20	244	1600000000	0.01269	247.003	5.1468	1760.435
0.25	245	9927117782	0.0204	249.003	5.1885	3019.785