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Journal of Nanomaterials
Volume 2014, Article ID 703463, 5 pages
Research Article

Resistive Switching Characteristics of a SiOx Layer with CF4 Plasma Treatment

1Department of Electronic Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan
2Department of Physics, National Kaohsiung Normal University, Kaohsiung 824, Taiwan

Received 9 December 2013; Revised 8 February 2014; Accepted 8 February 2014; Published 11 March 2014

Academic Editor: Sheng-Po Chang

Copyright © 2014 Chih-Yi Liu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A 20 nm SiOx layer is deposited using radio-frequency sputtering to form the resistive switching layer of a Cu/SiOx/Pt memory device. The SiOx-based device demonstrates the resistive switching characteristics with an electrochemical reaction. CF4 plasma treatment was used to modify the SiOx layer and incorporate fluorine atoms into the layer. The bombardment damage and fluorine incorporation caused the SiOx film to form a stack-like structure. This reduced the operating voltage and improved switching dispersion. The fluorine repaired the Cu/SiOx interface, thus increasing the barrier height of the Cu/SiOx interface and the resistance of the high resistance state. A statistical analysis of the conducting filament formation was performed in order to evaluate the number of formation/rupture sites. The resistive switching of the CF4-treated sample had higher possibility to use the same filament sites; thus, the CF4-treated sample had stable resistive switching behavior.