Resistive Switching Characteristics of a SiO_x Layer with CF₄ Plasma Treatment

Table 1

The statistical results of the conducting filament formation for the control and CF₄-treated samples.

	After forming process		SET process
	Type	Percentage	Multiple filament	Reuse difference	Reuse sum
Control sample	Single	50%	1.5%	94.8%	97.7%
	Multiple	50%	7.9%	49.3%	88.9%
	Total	100%	4.7%	72.0%	93.3%
CF4-treated sample	Single	100%	0.4%	95.4%	96.8%