Mixed Phases at the Bottom Interface of Si-Doped AlGaN Epilayers of Optoelectronic Devices

<table>Raman spectra of Si-doped Al<sub>0.4</sub>Ga<sub>0.6</sub>N epilayers. Inset is Raman spectra of sample A from 220 cm<sup>−1</sup> to 980 cm<sup>−1</sup>. Dotted lines L1 and L2 are used for visual aid. Cubic Al<sub>0.4</sub>Ga<sub>0.6</sub>N (LO) modes are observed.</table>

Journal of Nanomaterials

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Figure 4

Figure 4: Mixed Phases at the Bottom Interface of Si-Doped AlGaN Epilayers of Optoelectronic Devices 