Journal of Nanomaterials / 2014 / Article / Fig 4

Research Article

Mixed Phases at the Bottom Interface of Si-Doped AlGaN Epilayers of Optoelectronic Devices

Figure 4

Raman spectra of Si-doped Al0.4Ga0.6N epilayers. Inset is Raman spectra of sample A from 220 cm−1 to 980 cm−1. Dotted lines L1 and L2 are used for visual aid. Cubic Al0.4Ga0.6N (LO) modes are observed.
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