Mixed Phases at the Bottom Interface of Si-Doped AlGaN Epilayers of Optoelectronic Devices
Raman spectra of Si-doped Al0.4Ga0.6N epilayers. Inset is Raman spectra of sample A from 220 cm−1 to 980 cm−1. Dotted lines L1 and L2 are used for visual aid. Cubic Al0.4Ga0.6N (LO) modes are observed.