Void Structures in Regularly Patterned ZnO Nanorods Grown with the Hydrothermal Method
Figure 10
(a) HAADF image of an as-grown Ga-doped NR sample. (b)–(d) HAADF images of the Ga-doped ZnO NR samples after they are thermally annealed at 200, 300, and 400°C, respectively. The Ga-doped ZnO NRs are grown under the standard condition. The annealing process is undertaken with ambient oxygen for 60 min. In each of those images, a horizontal dashed line is drawn, along which EDX analysis is made.
