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Journal of Nanomaterials
Volume 2014, Article ID 787132, 6 pages
Research Article

Investigation of Low-Frequency Noise Characterization of 28-nm High-k pMOSFET with Embedded SiGe Source/Drain

1Institute of Microelectronics and Department of Electrical Engineering, Advanced OptoelectronicTechnology Center, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan City 701, Taiwan
2Department of Electronic Engineering, Cheng Shiu University, Kaohsiung City 833, Taiwan
3Central R&D Division, United Microelectronics Corporation (UMC), Tainan City 744, Taiwan

Received 10 December 2013; Revised 19 February 2014; Accepted 20 February 2014; Published 30 March 2014

Academic Editor: Sheng-Po Chang

Copyright © 2014 Shih-Chang Tsai et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We have studied the low-frequency noise characterizations in 28-nm high-k (HK) pMOSFET with embedded SiGe source/drain (S/D) through   noise and random telegraph noise measurements simultaneously. It is found that uniaxial compressive strain really existed in HK pMOSFET with embedded SiGe S/D. The compressive strain induced the decrease in the tunneling attenuation length reflecting in the oxide trap depth from Si/SiO2 interface to the HK layer, so that the oxide traps at a distance from insulator/semiconductor interface cannot capture carrier in the channel. Consequently, lower   noise level in HK pMOSFET with embedded SiGe S/D is observed, thanks to the less carrier fluctuations from trapping/detrapping behaviors. This result represents an intrinsic benefit of HK pMOSFET using embedded SiGe S/D in low-frequency noise characteristics.