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Journal of Nanomaterials
Volume 2014, Article ID 879813, 14 pages
http://dx.doi.org/10.1155/2014/879813
Research Article

Enhanced Device and Circuit-Level Performance Benchmarking of Graphene Nanoribbon Field-Effect Transistor against a Nano-MOSFET with Interconnects

1Faculty of Electrical Engineering, Universiti Teknologi Malaysia (UTM), 81310 Skudai, Johor, Malaysia
2Division of Engineering and Physics, Wilkes University, Wilkes-Barre, PA 18766, USA

Received 10 December 2013; Revised 11 February 2014; Accepted 12 February 2014; Published 26 March 2014

Academic Editor: Tianxi Liu

Copyright © 2014 Huei Chaeng Chin et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Huei Chaeng Chin, Cheng Siong Lim, Weng Soon Wong, Kumeresan A. Danapalasingam, Vijay K. Arora, and Michael Loong Peng Tan, “Enhanced Device and Circuit-Level Performance Benchmarking of Graphene Nanoribbon Field-Effect Transistor against a Nano-MOSFET with Interconnects,” Journal of Nanomaterials, vol. 2014, Article ID 879813, 14 pages, 2014. https://doi.org/10.1155/2014/879813.