Enhanced Device and Circuit-Level Performance Benchmarking of Graphene Nanoribbon Field-Effect Transistor against a Nano-MOSFET with Interconnects

Table 3

Device parameters and performance metrics of GNRFET, n-type, and p-type MOSFET.

Parameter	GNRFET	n-type MOSFET	p-type MOSFET
Electrical gate oxide thickness (nm)	2.0	1.0	1.6
Gate dielectric constant relative to vacuum	25	25	25
Subthreshold swing (mV/decade)	70.1704	61.7527	70.7253
Drain-induced barrier lowering (mV/V)	40.7448	35.2515	36.6697
On/off ratio, (𝐼on/𝐼off)	3.42 × 10^4	1.25 × 10^6	6.9868 × 10^5