Research Article
Enhanced Device and Circuit-Level Performance Benchmarking of Graphene Nanoribbon Field-Effect Transistor against a Nano-MOSFET with Interconnects
Table 4
ITRS 2005 based simulation parameters (adapted from [
22]).
| Technology process (nm) | 32 | 22 | 14 |
| Local and intermediate | | | | Width W (nm) | 32 | 22 | 14 | ILD thickness (nm) | 54.40 | 39.60 | 25.20 | (pF/m) | 144.93 | 131.01 | 111.83 | (pF/m) | 130.15 | 117.70 | 100.51 | Global | | | | Width W (nm) | 48 | 32 | 21 | ILD thickness (nm) | 110.40 | 76.80 | 52.50 | (pF/m) | 179.78 | 163.30 | 139.30 | (pF/m) | 163.81 | 148.90 | 126.78 |
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