Research Article

Enhanced Device and Circuit-Level Performance Benchmarking of Graphene Nanoribbon Field-Effect Transistor against a Nano-MOSFET with Interconnects

Table 4

ITRS 2005 based simulation parameters (adapted from [22]).

Technology process (nm)322214

Local and intermediate
 Width W (nm)322214
 ILD thickness (nm)54.4039.6025.20
(pF/m)144.93131.01111.83
(pF/m)130.15117.70100.51
Global
 Width W (nm)483221
 ILD thickness (nm)110.4076.8052.50
(pF/m)179.78163.30139.30
(pF/m)163.81148.90126.78