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Journal of Nanomaterials
Volume 2014 (2014), Article ID 951360, 9 pages
http://dx.doi.org/10.1155/2014/951360
Research Article

Horizontal Assembly of Single Nanowire Diode Fabricated by p-n Junction GaN NW Grown by MOCVD

1Semiconductor Materials and Process Laboratory, School of Advanced Materials Engineering, Research Center for Advanced Materials Development (RCAMD), Chonbuk National University, Jeonju 561-756, Republic of Korea
2Department of General Studies, Physics Group, Jubail University College, Royal Commission for Jubail, Jubail 10074, Saudi Arabia
3Department of Physics, Yonsei University, Seoul 120-749, Republic of Korea

Received 24 January 2014; Accepted 16 June 2014; Published 10 July 2014

Academic Editor: Alireza Talebitaher

Copyright © 2014 Ji-Hyeon Park et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Ji-Hyeon Park, Suthan Kissinger, Yong Ho Ra, et al., “Horizontal Assembly of Single Nanowire Diode Fabricated by p-n Junction GaN NW Grown by MOCVD,” Journal of Nanomaterials, vol. 2014, Article ID 951360, 9 pages, 2014. doi:10.1155/2014/951360