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Journal of Nanomaterials
Volume 2015 (2015), Article ID 104930, 6 pages
Research Article

Microstructure Control of Columnar-Grained Silicon Substrate Solidified from Silicon Melts Using Gas Pressure

1Advanced Materials and Devices Laboratory, Korea Institute of Energy Research, Daejeon 305-343, Republic of Korea
2Graduate School of Energy Science and Technology, Chungnam National University, Daejeon 305-764, Republic of Korea

Received 17 April 2015; Revised 24 August 2015; Accepted 25 August 2015

Academic Editor: Stefano Bellucci

Copyright © 2015 Jun-Kyu Lee et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A silicon substrate with the dimensions of 100 × 140 × 0.3 mm was grown directly from liquid silicon with gas pressure. The silicon melt in the sealed melting part was injected into the growth part at applied pressure of 780–850 Torr. The solidified silicon substrate was then transferred by the pull of the cooled dummy bar. A desirable structure with a liquid-solid interface perpendicular to the pulling direction was formed when the mold temperature in the solidification zone of the growth part was much higher than that of the dummy bar, as this technique should be able to overcome thermal loss through the molds and the limited heat flux derived from the very narrow contact area between the silicon melt and the dummy bar. In addition, because the metallic impurities and expansion of volume during solidification are preferably moved to a liquid phase, a high-quality silicon substrate, without defects such as cracks and impurities in the substrate, could be manufactured in the interface structure. The present study reports the experimental findings on a new and direct growth system for obtaining silicon substrates characterized by high quality and productivity, as a candidate for alternate routes for the fabrication of silicon substrates.