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Journal of Nanomaterials
Volume 2015, Article ID 124640, 5 pages
Research Article

Diamond Based Field-Effect Transistors of Zr Gate with Dielectric Layers

Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi’an Jiaotong University, Shaanxi, Xi’an 710049, China

Received 24 March 2015; Accepted 23 April 2015

Academic Editor: Jose Alvarez

Copyright © 2015 W. Wang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Investigation of Zr-gate diamond field-effect transistor with dielectric layers (SD-FET) has been carried out. SD-FET works in normally on depletion mode with p-type channel, whose sheet carrier density and hole mobility are evaluated to be 2.17 × 1013 cm−2 and 24.4 cm2·V−1·s−1, respectively. The output and transfer properties indicate the preservation of conduction channel because of the dielectric layer, which may be explained by the interface bond of C-N. High voltage up to −200 V is applied to the device, and no breakdown is observed. For comparison, another traditional surface channel FET (SC-FET) is also fabricated.