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Journal of Nanomaterials
Volume 2015, Article ID 135130, 6 pages
Research Article

Effect of Substrate Temperature on the Thermoelectric Properties of the Sb2Te3 Thin Films Deposition by Using Thermal Evaporation Method

1Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung 804, Taiwan
2Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan

Received 13 August 2014; Revised 15 October 2014; Accepted 15 October 2014

Academic Editor: Teen-Hang Meen

Copyright © 2015 Jyun-Min Lin et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The antimony-telluride (Sb2Te3) thermoelectric thin films were prepared on SiO2/Si substrates by thermal evaporation method. The substrate temperature that ranged from room temperature to 150°C was adopted to deposit the Sb2Te3 thin films. The effects of substrate temperature on the microstructures and thermoelectric properties of the Sb2Te3 thin films were investigated. The crystal structure and surface morphology of the Sb2Te3 thin films were characterized by X-ray diffraction analyses and field emission scanning electron microscope observation. The RT-deposited Sb2Te3 thin films showed the amorphous phase. Te and Sb2Te3 phases were coexisted in the Sb2Te3-based thin films as the substrate temperature was higher than room temperature. The average grain sizes of the Sb2Te3-based thin films were 39 nm, 45 nm, 62 nm, 84 nm, and 108 nm, as the substrate temperatures were 50°C, 75°C, 100°C, 125°C, and 150°C, respectively. The Seebeck coefficients, electrical conductivity, and power factor were measured at room temperature; we had found that they were critically dependent on the substrate temperature.