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Journal of Nanomaterials
Volume 2015, Article ID 142096, 6 pages
http://dx.doi.org/10.1155/2015/142096
Research Article

Improved Light Output Power of Chemically Transferred InGaN/GaN Light-Emitting Diodes for Flexible Optoelectronic Applications

1Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya, Aichi 464-8603, Japan
2Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Republic of Korea
3HPC Advanced Development Team, LG Innotek, Paju, Gyeonggi-do 413-901, Republic of Korea
4Wafer Characteristics Research Team, LG Siltron, Gumi, Gyeongsangbuk-do 730-724, Republic of Korea

Received 14 August 2015; Accepted 27 September 2015

Academic Editor: Kamal Alameh

Copyright © 2015 Ho-Jun Lee et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Ho-Jun Lee, Jung-Wook Min, Kye-Jin Lee, et al., “Improved Light Output Power of Chemically Transferred InGaN/GaN Light-Emitting Diodes for Flexible Optoelectronic Applications,” Journal of Nanomaterials, vol. 2015, Article ID 142096, 6 pages, 2015. https://doi.org/10.1155/2015/142096.