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Journal of Nanomaterials
Volume 2015, Article ID 142096, 6 pages
http://dx.doi.org/10.1155/2015/142096
Research Article

Improved Light Output Power of Chemically Transferred InGaN/GaN Light-Emitting Diodes for Flexible Optoelectronic Applications

1Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya, Aichi 464-8603, Japan
2Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Republic of Korea
3HPC Advanced Development Team, LG Innotek, Paju, Gyeonggi-do 413-901, Republic of Korea
4Wafer Characteristics Research Team, LG Siltron, Gumi, Gyeongsangbuk-do 730-724, Republic of Korea

Received 14 August 2015; Accepted 27 September 2015

Academic Editor: Kamal Alameh

Copyright © 2015 Ho-Jun Lee et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. R. Houbertz, G. Domann, C. Cronauer et al., “Inorganic-organic hybrid materials for application in optical devices,” Thin Solid Films, vol. 442, no. 1-2, pp. 194–200, 2003. View at Publisher · View at Google Scholar · View at Scopus
  2. N. T. Kalyani and S. J. Dhoble, “Organic light emitting diodes: energy saving lighting technology—a review,” Renewable and Sustainable Energy Reviews, vol. 16, no. 5, pp. 2696–2723, 2012. View at Publisher · View at Google Scholar · View at Scopus
  3. T. Nakayama, K. Hiyama, K. Furukawa, and H. Ohtani, “Development of a phosphorescent white OLED with extremely high power efficiency and long lifetime,” Journal of the Society for Information Display, vol. 16, no. 2, pp. 231–236, 2008. View at Publisher · View at Google Scholar · View at Scopus
  4. F. A. Ponce and D. P. Bour, “Nitride-based semiconductors for blue and green light-emitting devices,” Nature, vol. 386, no. 6623, pp. 351–359, 1997. View at Publisher · View at Google Scholar · View at Scopus
  5. D. A. Gaul and W. S. Rees Jr., “True blue inorganic optoelectronic devices,” Advanced Materials, vol. 12, no. 13, pp. 935–946, 2000. View at Publisher · View at Google Scholar · View at Scopus
  6. R.-H. Kim, S. Kim, Y. M. Song et al., “Flexible vertical light emitting diodes,” Small, vol. 8, no. 20, pp. 3123–3128, 2012. View at Publisher · View at Google Scholar · View at Scopus
  7. S. Y. Lee, K.-I. Park, C. Huh et al., “Water-resistant flexible GaN LED on a liquid crystal polymer substrate for implantable biomedical applications,” Nano Energy, vol. 1, no. 1, pp. 145–151, 2012. View at Publisher · View at Google Scholar · View at Scopus
  8. S.-I. Park, A.-P. Le, J. Wu, Y. Huang, X. Li, and J. A. Rogers, “Light emission characteristics and mechanics of foldable inorganic light-emitting diodes,” Advanced Materials, vol. 22, no. 28, pp. 3062–3066, 2010. View at Publisher · View at Google Scholar · View at Scopus
  9. S.-I. Park, Y. Xiong, R.-H. Kim et al., “Printed assemblies of inorganic light-emitting diodes for deformable and semitransparent displays,” Science, vol. 325, no. 5943, pp. 977–981, 2009. View at Publisher · View at Google Scholar · View at Scopus
  10. D. Zhu, D. J. Wallis, and C. J. Humphreys, “Prospects of III-nitride optoelectronics grown on Si,” Reports on Progress in Physics, vol. 76, no. 10, Article ID 106501, 2013. View at Publisher · View at Google Scholar · View at Scopus
  11. A. Able, W. Wegscheider, K. Engl, and J. Zweck, “Growth of crack-free GaN on Si(1 1 1) with graded AlGaN buffer layers,” Journal of Crystal Growth, vol. 276, no. 3-4, pp. 415–418, 2005. View at Publisher · View at Google Scholar · View at Scopus
  12. D. Kapolnek, X. H. Wu, B. Heying et al., “Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire,” Applied Physics Letters, vol. 67, no. 11, pp. 1541–1543, 1995. View at Publisher · View at Google Scholar · View at Scopus
  13. Y. Narukawa, Y. Kawakami, S. Fujita, S. Fujita, and S. Nakamura, “Recombination dynamics of localized excitons in In0.20Ga0.80N-In0.05Ga0.95N multiple quantum wells,” Physical Review B, vol. 55, no. 4, pp. R1938–R1941, 1997. View at Publisher · View at Google Scholar · View at Scopus
  14. G. Pozina, J. P. Bergman, B. Monemar, T. Takeuchi, H. Amano, and I. Akasaki, “Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells,” Journal of Applied Physics, vol. 88, no. 5, pp. 2677–2681, 2000. View at Google Scholar
  15. E. Feltin, B. Beaumont, M. Laügt et al., “Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy,” Applied Physics Letters, vol. 79, no. 20, pp. 3230–3232, 2001. View at Publisher · View at Google Scholar · View at Scopus
  16. T. Jeong, K. H. Kim, H. H. Lee et al., “Enhanced light output power of GaN-based vertical light-emitting diodes by using highly reflective ITO-Ag-Pt reflectors,” IEEE Photonics Technology Letters, vol. 20, no. 23, pp. 1932–1934, 2008. View at Publisher · View at Google Scholar
  17. A. Dadgar, J. Bläsing, A. Diez, A. Alam, M. Heuken, and A. Krost, “Metalorganic chemical vapor phase epitaxy of crack-free GaN on Si(111) exceeding 1 μm in thickness,” Japanese Journal of Applied Physics, vol. 39, no. 11, pp. L1183–L1185, 2000. View at Publisher · View at Google Scholar · View at Scopus
  18. A. Dadgar, C. Hums, A. Diez, J. Bläsing, and A. Krost, “Growth of blue GaN LED structures on 150-mm Si(1 1 1),” Journal of Crystal Growth, vol. 297, no. 2, pp. 279–282, 2006. View at Publisher · View at Google Scholar · View at Scopus
  19. T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Applied Physics Letters, vol. 84, no. 6, pp. 855–857, 2004. View at Publisher · View at Google Scholar · View at Scopus
  20. X. Quo and E. F. Schubert, “Current crowding in GaN/InGaN light emitting diodes on insulating substrates,” Journal of Applied Physics, vol. 90, no. 8, pp. 4191–4195, 2001. View at Publisher · View at Google Scholar · View at Scopus