Journal of Nanomaterials / 2015 / Article / Fig 8

Research Article

The Achievement of a Zinc Oxide-Based Homojunction Diode Using Radio Frequency Magnetron Cosputtering System

Figure 8

Elemental depth profiles of the (a) as-deposited, (b) 300°C-annealed, and (c) 400°C-annealed Au/Ni/p-ZnO contact systems, conducted by AES measurements.
(a) As-deposited Au/Ni/p-ZnO
(b) 300°C-annealed Au/Ni/p-ZnO
(c) 400°C-annealed Au/Ni/p-ZnO

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