Research Article

Catalyst-Free Bottom-Up Synthesis of Few-Layer Hexagonal Boron Nitride Nanosheets

Table 1

Synthesis and electrical property of h-BN nanosheets.

SampleReaction conditionsYield (%) Band gap (eV)

BNS12800°C, 12 hrs835.989
BNS24800°C, 24 hrs856.018
BNS48800°C, 48 hrs876.048

Band gaps are calculated from UV-Vis spectroscopic data.