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Journal of Nanomaterials
Volume 2015, Article ID 329570, 8 pages
Research Article

Electronic and Magnetic Properties of Rare-Earth Metals Doped ZnO Monolayer

1College of Applied Science, Harbin University of Science and Technology, Harbin 150080, China
2School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China

Received 24 March 2015; Revised 29 June 2015; Accepted 2 July 2015

Academic Editor: Chaochao Dun

Copyright © 2015 Changlong Tan et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The structural, electronic, and magnetic properties of rare-earth metals doped ZnO monolayer have been investigated using the first-principles calculations. The induced spin polarization is confirmed for Ce, Eu, Gd, and Dy dopings while the induced spin polarization is negligible for Y doping. The localized states of rare-earth atoms respond to the introduction of a magnetic moment. ZnO monolayer undergoes transition from semiconductor to metal in the presence of Y, Ce, Gd, and Dy doping. More interestingly, Eu doped ZnO monolayer exhibits half-metallic behavior. Our result demonstrates that the RE-doping is an efficient route to modify the magnetic and electronic properties in ZnO monolayer.