MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System
Figure 4
(a) RF response of different diameter MUTC-PD devices at 5 V, inset shows the optical image of device under test, and (b) shows the comparison of high power MUTC-PD with the various similar high power devices in literature [5, 9, 20, 22].
