MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System

Table 1

Material	Doping	Thickness
p-InGaAs	Zn,	60 nm
p-InP	Zn,	350 nm
p-InGaAs	Zn,	75 nm
p-InGaAs	Zn,	100 nm
p-InGaAs	Zn,	150 nm
p-InGaAs	Zn,	150 nm
n-InGaAsP	Si,	200 nm
n-InGaAs, Q1.4	—	15 nm
InGaAsP, Q1.1	—	15 nm
n-InP	Si,	150 nm
n-InP	Si,	200 nm
n-InGaAs	Si,	20 nm
n-InP buffer	Si,	200 nm
InP substrate	Semi-Insulating	350 μm