MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System

Table 2

Summary of photocurrent for different devices under different bias and incident optical power.

Device diameter/incident power	Photocurrent, mA (no ARC)
	4 V	5 V	6 V
24 µm/21.7 dBm	25.1	25.8	26.2
30 µm/23 dBm	45.2	48.5	51.0
44 µm/23 dBm	57.5	62.3	65.1
50 µm/26 dBm	94.5	100.3	102.8
80 µm/28.4 dBm	125.6	136.5	144.5