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Journal of Nanomaterials
Volume 2015 (2015), Article ID 452851, 5 pages
Research Article

Study of Magnetization Reversal Process in FeCo/Ru/FeCo Exchange Coupled Synthetic Antiferromagnetic Multilayers

1Key Laboratory of Ministry of Education on Opto-Electronic Technology and Intelligent Control, Lanzhou Jiaotong University, LanZhou, Gansu 730070, China
2Department of Materials Science and Engineering, Akita University, Tegata Gakuen-machi, Akita 010-8502, Japan

Received 13 September 2014; Revised 24 November 2014; Accepted 8 December 2014

Academic Editor: Jiamin Wu

Copyright © 2015 Xi Liu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


FeCo/Ru/FeCo exchange coupled synthetic antiferromagnetic multilayers were prepared with two sputtering modes. One is continuous sputtering mode, and the other mode is layer-by-layer sputtering mode. The former mode implies that substrate faced the target and film growth process was continuous when FeCo layers were sputtering, whereas the latter implies that substrate was rotating with the mask at a speed of 5 rpm when FeCo layers were sputtering. It was found that the exchange coupling field of sample sputtered by layer-by-layer mode was higher than the one sputtered by continuous mode. Domain structures were measured with applying varied in-plane magnetic fields along the easy axis in order to study the magnetization reversal process. We found it is a domain wall move process. When the applied field is smaller than , both the two magnetic layers have domain structure and the domain structure of the two layers is reversed correspondingly. When the applied field is varying in the range of to , the domain wall of the two layers moves correspondingly at the same time.