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Journal of Nanomaterials
Volume 2015, Article ID 478375, 15 pages
Research Article

Gallium Nitride Electrical Characteristics Extraction and Uniformity Sorting

1Department of Electrical and Electronic Engineering, Ta Hua University of Science and Technology, No. 1, Dahua Road, Qionglin Shiang, Hsinchu County 30740, Taiwan
2Department of Mechanical Engineering, National Chiao Tung University, No. 1001, University Road, Hsinchu City 30010, Taiwan

Received 6 March 2015; Accepted 16 April 2015

Academic Editor: Meiyong Liao

Copyright © 2015 Shyr-Long Jeng et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [3 citations]

The following is the list of published articles that have cited the current article.

  • Hsu-Hung Hsueh, Sin-Liang Ou, Yu-Che Peng, Chiao-Yang Cheng, Dong-Sing Wuu, and Ray-Hua Horng, “Effect of Top-Region Area of Flat-Top Pyramid Patterned Sapphire Substrate on the Optoelectronic Performance of GaN-Based Light-Emitting Diodes,” Journal of Nanomaterials, vol. 2016, pp. 1–8, 2016. View at Publisher · View at Google Scholar
  • Chih-Chiang Wu, and Shyr-Long Jeng, “Simulation Model Development for Packaged Cascode Gallium Nitride Field-Effect Transistors,” Crystals, vol. 7, no. 8, pp. 250, 2017. View at Publisher · View at Google Scholar
  • Chih-Chiang Wu, and Shyr-Long Jeng, “High-performance single-phase full-bridge inverter using gallium nitride field effect transistors,” China Semiconductor Technology International Conference 2017, CSTIC 2017, 2017. View at Publisher · View at Google Scholar