Table of Contents Author Guidelines Submit a Manuscript
Journal of Nanomaterials
Volume 2015, Article ID 478375, 15 pages
http://dx.doi.org/10.1155/2015/478375
Research Article

Gallium Nitride Electrical Characteristics Extraction and Uniformity Sorting

1Department of Electrical and Electronic Engineering, Ta Hua University of Science and Technology, No. 1, Dahua Road, Qionglin Shiang, Hsinchu County 30740, Taiwan
2Department of Mechanical Engineering, National Chiao Tung University, No. 1001, University Road, Hsinchu City 30010, Taiwan

Received 6 March 2015; Accepted 16 April 2015

Academic Editor: Meiyong Liao

Copyright © 2015 Shyr-Long Jeng et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. B. Ozpineci, L. M. Tolbert, S. K. Islam, and M. Chinthavali, “Comparison of wide bandgap semiconductors for power applications,” in Proceedings of the 10th European Conference on Power Electronics and Applications, Toulouse, France, September 2003.
  2. K. Shenai, M. Dudley, and R. F. Davis, “Rugged electrical power switching in semiconductors: a systems approach,” Proceedings of the IEEE, vol. 102, no. 1, pp. 35–52, 2014. View at Publisher · View at Google Scholar · View at Scopus
  3. T. Ueda, M. Ishida, T. Tanaka, and D. Ueda, “GaN transistors on Si for switching and high-frequency applications,” Japanese Journal of Applied Physics, vol. 53, no. 10, Article ID 100214, pp. 1–8, 2014. View at Publisher · View at Google Scholar
  4. K. Shirabe, M. M. Swamy, J.-K. Kang et al., “Efficiency comparison between Si-IGBT-based drive and GaN-based drive,” IEEE Transactions on Industry Applications, vol. 50, no. 1, pp. 566–572, 2014. View at Publisher · View at Google Scholar · View at Scopus
  5. B. Wang, N. Tipirneni, M. Riva, A. Monti, G. Simin, and a. E. Santi, “An efficient high-frequency drive circuit for GaN power HFETs,” IEEE Transactions on Industry Applications, vol. 45, no. 2, pp. 843–853, 2009. View at Publisher · View at Google Scholar
  6. P. Chou, S. Cheng, and S. Chen, “Evaluation of thermal performance of all-GaN power module in parallel operation,” Applied Thermal Engineering, vol. 70, no. 1, pp. 593–599, 2014. View at Publisher · View at Google Scholar
  7. S. Tsai, H. Hsu, Y. Tu, and E. Y. Chang, “Investigation of electrical and thermal properties of multiple AlGaN/GaN high-electron-mobility transistors flip-chip packaged in parallel for power electronics,” Applied Physics Express, vol. 8, no. 3, Article ID 034101, 4 pages, 2015. View at Publisher · View at Google Scholar
  8. H. Umegami, F. Hattori, Y. Nozaki, M. Yamamoto, and O. Machida, “A Novel high-efficiency gate drive circuit for normally off-type GaN FET,” IEEE Transactions on Industry Applications, vol. 50, no. 1, pp. 593–599, 2014. View at Publisher · View at Google Scholar · View at Scopus
  9. Y. Xi, M. Chen, K. Nielson, and R. Bell, “Optimization of the drive circuit for enhancement mode power GaN FETs in DC-DC converters,” in Proceedings of the 27th Annual IEEE Applied Power Electronics Conference and Exposition (APEC '12), pp. 2467–2471, IEEE, Orlando, Fla, USA, February 2012. View at Publisher · View at Google Scholar · View at Scopus
  10. J. Strydom and A. Lidow, “Driving eGaN transistors for maximum performance,” 2011, http://epc-co.com/.
  11. P. Jacqmaer, J. Everts, R. Gelagaevz, P. Tant, and J. Driesen, “Fast robust gate-drivers with easily adjustable voltage ranges for driving normally-on wide-bandgap power transistors,” in Proceedings of the 14th International Power Electronics and Motion Control Conference (EPE-PEMC '10), pp. T244–T251, Ohrid, Macedonia, September 2010. View at Publisher · View at Google Scholar · View at Scopus
  12. How to Drive GaN Enhancement Mode Power Switching Transistors, GaNSystems Application Note GN001, http://www.gansystems.com/.
  13. Designing Hard-switched Bridges with GaN, Transphorm Application Note AN0004, http://www.transphormusa.com/.
  14. L. Balogh, “Design and application guide for high speed MOSFET gate drive circuit,” in Proceedings of the 2001 Power Supply Design Seminar, Texas Instruments, 2001.
  15. Design and Application Guide of Bootstrap Circuit for High Voltage Gate Drive IC, Fairchild Application Note AN-6076, http://www.fairchildsemi.com/.
  16. IRF630 ST Microelectronics Datasheet, http://www.st.com/.
  17. IXTA6N50D2, IXTP6N50D2, IXTH6N50D2 Datasheet, http://ixdev.ixys.com/DataSheet/DS100177B%28IXTA-TP-TH6N50D2%29.pdf.
  18. EPC2010 Datasheet, http://epc-co.com/.
  19. EPC GaN Transistor Parametric Characterization Guide, http://epc-co.com.
  20. A. Ortiz-Conde, F. J. García Sánchez, J. J. Liou, A. Cerdeira, M. Estrada, and Y. Yue, “A review of recent MOSFET threshold voltage extraction methods,” Microelectronics Reliability, vol. 42, no. 4-5, pp. 583–596, 2002. View at Publisher · View at Google Scholar · View at Scopus
  21. Agilent Technologies, Agilent B1505A Power Device Analyzer/Curve Tracer, Step by Step Measurement Handbook for Power MOSFET, http://www.agilent.com/.
  22. Fairchild AN-9005, Driving and Layout Design for Fast Switching. Super-Junction MOSFETs, http://www.semi.com/an/AN/AN-9005.pdf.
  23. K. Shah and K. Shenai, “Simple and accurate circuit simulation model for gallium nitride power transistors,” IEEE Transactions on Electron Devices, vol. 59, no. 10, pp. 2735–2741, 2012. View at Publisher · View at Google Scholar · View at Scopus
  24. Y. Cheng, M.-C. Jeng, Z. Liu et al., “A physical and scalable I-V model in BSIM3v3 for analog/digital circuit simulation,” IEEE Transactions on Electron Devices, vol. 44, no. 2, pp. 277–287, 1997. View at Publisher · View at Google Scholar · View at Scopus
  25. IsSpice4 User's Guide, http://www.intusoft.com.