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Journal of Nanomaterials
Volume 2015, Article ID 537696, 6 pages
http://dx.doi.org/10.1155/2015/537696
Research Article

Investigation of In Situ Boron-Doping in SiGe Source/Drain Layer Growth for PMOS Devices

1State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
2Shanghai IC R&D Center Co. Ltd., Shanghai 201210, China

Received 9 September 2015; Accepted 15 October 2015

Academic Editor: You Yin

Copyright © 2015 Min Zhong et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Min Zhong, Shou Mian Chen, and David Wei Zhang, “Investigation of In Situ Boron-Doping in SiGe Source/Drain Layer Growth for PMOS Devices,” Journal of Nanomaterials, vol. 2015, Article ID 537696, 6 pages, 2015. https://doi.org/10.1155/2015/537696.